Purpose and area of application

   Double beam ion source (DBIS) is purposed for the technology of formation of thin films of metals, semiconductors and dielectrics by dual ion beam sputtering (DIBS) method, carry out activation processes and clearing of substrates. DBIS generate two independent ion beams.

Application:

precleaning; forming of transitional layer film-substrate (ion-mixing); dual ion beam sputtering; reactive ion beam sputtering. Technical characteristics Sputtering beam characteristics of the DBIS: anode voltage 6000 V working gas pressure 0.01 – 0.03 Pa ion beam current up to 300 mA ion energies up to 2000 eV Assisting beam characteristics of the DBIS: anode voltage 3000 V (max – 6000 V) working gas pressure 0.01 – 0.03 Pa ion beam current up to 100 mA ion energies up to 1000 eV (max – 2000 V)

Features and application

   The using inert and reactive gases or mixtures (oxygen, nitrogen, and other) lets effectively deposit component films which differ with material of target.
Metallic, semiconductors and dielectrics targets (SiO₂, graphite, BN, teflone, etc) can be used. Targets system can be made as a block which consists from four rotating targets that lets form different films in onepumping. Filament neutralizer is used in case sputtering of dielectric targets.
   Depend on choice of assisting modes it possible to depose different phases that lets to get good possibilities to control properties of growing films (hardness, transparency, conductivity, etc.) and deposit films with unique adhesion which resist to different environments (laser radiation, tem-perature cycle changes, mechanical affects).Using DBIS were formed high-milt-point metallic films and nitrides of their, advanced adhesion DLC films, high laser resistance mirrors, etc. The thin films growth rate for different materials is 0.3-8 A/s (for instance, for Cu - 3 A/s).

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