ION SOURCES FOR THE ION BEAM ASSISTED DEPOSITION (IS FOR IBAD) AND ION CLEANING.
Contact:
 Thin Films Research Laboratory
phone: (+375 17) 2327115
e-mail:

Belarusian State University of Informatics and Radioelectronics
Address: 6, P.Brovka str., 220013, Minsk,
Republic of Belarus

Purpose and area of application

   Of the many gridless acceleration concepts investigated, the Hall-current ion source, also named Closed-Drift Ion Source is the most promising for high-current, low-energy ion beam as-sisted deposition (IBAD) application. Therefore, ease of maintenance and generally higher rugged in comparison with gridded ion sources make the Closed-Drift Ion Sources more suitable for R&D and industrial application.

   In sources the accelerating potential difference for the ions is generated with a magnetic field and a electron current. This generating process results in a circulating or Hall current in the acceleration region. The ion current densities possible with this acceleration process are much greater than those possible with other type sources, particularly at low ion energies. Further, the hardware associated with this acceleration process tends to be simple and rugged. The closed-drift type described herein tends to be both flexible in operation and insensitive to contamination from the surrounding environment, hence suited to materials applications.

   In the Thin Films Research Laboratory, several types of the Closed-Drift Ion Sources for ion beam assisted deposition using inert or reactive gases, (oxygen, nitrogen, CxHy ) were developed.

1. The closed-drift ion source (anode-layer version).
2. The end-Hall source.
3. The double closed-drift ion source.
4. The combined closed-drift ion source.

Technical characteristics

1.The closed-drift ion source (anode-layer version).

  • working gas pressure – 0.01 – 0.06 Pa;
  • ion beam current – up to 300 mA;
  • ion energies – 500 - 2000 eV.

2. The end-Hall source.

  • working gas pressure – 0.01 – 0.1 Pa;
  • ion beam current – up to 150 mA;
  • ion energies – up to 30 - 140 eV.
3. The double closed-drift ion source (experimental prototype)

  • ion beam current up to 1.5 A at ion energies of 30-180 eV;
  • ion beam current up to 1 A at ion energies of 180-250 eV;
  • ion beam current up to 50mA at ion energies of 250-2000 eV;
  • working gas pressure - 0.01-0.1 Pa

4. The combined closed-drift ion source (experimental prototype)

  • beam current is up to 1.5 A at ion energies of 30-180 eV; pressure 0.01-0.05 Pa.
  • beam current is up to 90 mA at ion energy 300-2000 eV; pressure 0.01-0.05 Pa.
  • beam current is up to 1A at ion energy 100-250 eV; pressure 0.01-0.2 Pa.
   Basic distinction of this sources are the extended ranges of ion energies and relatively high current beam for op-timization of deposition, sputtering and cleaning processes at working gas pressure within 0.01-0.1 Pa. Each of these ion sources can be made in round or extended geometry, and is different by ion energies and beam current and also by appli-cation field.

Applications and features include:

  • ion beam assisted deposition (IBAD) conjointly with electron-beam and laser evapo-rators, ion-beam sputtering systems;
  • ion beam precleaning;
  • ion beam etching;
  • direct ion beam deposition (DIBD);
  • ion beam assisted magnetron (IBAM);
  • ion beam assisted of arc evaporation;
  • increases film adhesion;
  • improves film stress control;
  • increases density or hardness;
  • produces a preferred orientation;
  • improves step coverage;
  • improves stoichiometry;
  • improves deposition of oxide and nitride films.

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Transfer center of technologies phone: (+ 375 17) 2327115
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