Magnetron sputtering system (MSS) has higher sputtering rates than diode sources and minimal substrate heating. There is promising trend in production of component layers (nitrides, oxides, etc.) using DC MSS. But the main problem in reactive sputtering is instabilities of dis-charge which occur when a dielectric film appears at the target surface.

   One of the ways to solve this problem is using methods of optic control. High rate sputtering requires rapid and careful control of the reactive gas partial pressure to achieve high deposition rates and to maintain stoichiometry in the coating. Recently, a new instrument called the optical spectral-control device that operates at sputtering pressures became available for sensing the partial pressure of the gases in the sputtering atmosphere. In this case can be used four-channel spectral controller for check and operate the technological plasma (vacuum-arc, magnetron, etc.) processes. The other way to solve this problem is using ion beam assisted magnetron (IBAM) methods, where ion beams of reactive gases bombard the growing phase of the film. In this case, MSS sputter in inert gases atmosphere. The sputtered material is deposited on substrate simultane-ously with bombardment of reactive gas ions from ion source. The advantages of this method are both as high rate of film growth as good control of film adhesion characteristics, structure of layers.

   But the difficulty of operating DC MSS and the ion source under the same working pressure prevents of this method to become widespread.

   In our University was developed DC MSS with a planar cathode which can operate under re-lieved as low as 10^-2 Pa pressures. This gives ability to use the DC MSS together with ion sources of developed types

Characteristics of the DC MSS:

• working gas pressure within 0.02-0.5 Pa.;
• discharge current up to 15 À under voltage up to 600 V. MSS and ion sources can be round and extended geometry.